Fabrication of cosputtered Zn-In-Sn-O films and their applications to organic light-emitting diodes

Solid State Communications

Volumn 149, Issue 41-42, 2009, Pages 1731-1734

  Heo, Gi Seok ^a   Matsumoto, Yuji ^b   Gim, In Gi ^a   Park, Jong Woon ^a   Kim, Kwang Young ^a   Kim, Tae Won ^a  

^a Korea Institute of Industrial Technology ^*  (South Korea)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A. TCO; A. Zn In Sn O; B. RF magnetron cosputtering; C. Amorphous semiconductor

Indexed keywords

A. TCO; A. ZN-IN-SN-O; B. RF MAGNETRON COSPUTTERING; C. AMORPHOUS SEMICONDUCTOR; CERAMIC OXIDES; CONTROL DEVICE; GLASS SUBSTRATES; INDIUM OXIDE; OPTICAL TRANSPARENCY; RF-MAGNETRON CO-SPUTTERING; SN-DOPED; SUBSTRATE TEMPERATURE; TURN ON VOLTAGE; ZINC CONTENT; ZNO;

AMORPHOUS SEMICONDUCTORS; CERAMIC MATERIALS; CONTROL; CURRENT DENSITY; ELECTRIC RESISTANCE; FABRICATION; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MAGNETRONS; ORGANIC LIGHT EMITTING DIODES (OLED); OXIDE FILMS; SEMICONDUCTOR DIODES; SUBSTRATES; TIN; WORK FUNCTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

ZINC;

EID: 69849111846     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.07.050     Document Type: Article

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