Stark effect modeling in strained n-type Si/Si 1-xGe x resonant tunneling heterostructures

Journal of Applied Physics

Volumn 91, Issue 11, 2002, Pages 9170-9176

  Zid, F Ben ^a   Bhouri, A ^a   Mejri, H ^a   Tlili, R ^a   Said, M ^a   Lazzari, J L ^b   D'Avitaya, F Arnaud ^b   Derrien, J ^b  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b CAMPUS DE LUMINY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND DISCONTINUITIES; HETERO-INTERFACES; HIGHLY SENSITIVE; TUNNELING EFFECTS;

CHARGE TRANSFER; ELECTRIC FIELDS; ELECTRON GAS; HETEROJUNCTIONS; POISSON EQUATION; RESONANT TUNNELING; SILICON; STARK EFFECT;

GERMANIUM;

EID: 84861434186     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1473213     Document Type: Article

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