Cross-barrier recombination in a GaAs/AlGaAs double-barrier resonant tunneling structure

Journal of Applied Physics

Volumn 79, Issue 11, 1996, Pages 8844-8846

  Cockburn, J W ^a   Buckle, P D ^a,c   Skolnick, M S ^a   Birkett, M J ^a   Teissier, R ^a,d   Smith, G W ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005507185     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362511     Document Type: Article

References (12)

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12. If tunneling is 2D-2D but without conservation of lateral momentum, then the well levels can move relative to the emitter, but only by the emitter Fermi energy, as in the 3D-2D case.