Current-voltage characteristics of GaAs/AlAs double-barrier resonant tunneling diodes with a Si-planar-doped barrier

Journal of Applied Physics

Volumn 79, Issue 3, 1996, Pages 1801-1806

  Fukuyama, Hiroyuki ^a   Waho, Takao ^a   Mizutani, Takashi ^a,b  

^a NTT CORPORATION   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005413854     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360972     Document Type: Article

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