Theoretical study of Cs adsorption on GaN(0 0 0 1) surface

Applied Surface Science

Volumn 258, Issue 19, 2012, Pages 7425-7429

  Du, Yujie ^a,b   Chang, Benkang ^a   Wang, Xiaohui ^a   Zhang, Junju ^a   Li, Biao ^a   Wang, Meishan ^c  

^a NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b Institute of Bingzhou   (China)

^c LUDONG UNIVERSITY   (China)

Author keywords

Adsorption energy; Cs GaN(0 0 0 1) adsorption system; Electronic structure; First principles; Work function

Indexed keywords

ADATOMS; ADSORPTION; CALCULATIONS; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; WORK FUNCTION;

ADSORPTION CHARACTERISTIC; ADSORPTION ENERGIES; CS/GAN(0 0 0 1) ADSORPTION SYSTEMS; FIRST PRINCIPLES; FIRST-PRINCIPLES CALCULATION; GAN (0 0 0 1); THEORETICAL STUDY; ULTRASOFT PSEUDOPOTENTIALS;

DENSITY FUNCTIONAL THEORY;

EID: 84861345184     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.04.055     Document Type: Article

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