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Applied Physics Letters

Volumn 98, Issue 8, 2011, Pages

Influence of the p -type doping concentration on reflection-mode GaN photocathode

(4) Wang, Xiaohui a Chang, Benkang a Ren, Ling a Gao, Pin a

a NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DIFFUSION LENGTH; ELECTRON ESCAPE; EMISSION LAYERS; FITTING RESULTS; LONG WAVELENGTH; P-TYPE DOPING;

FIELD EMISSION CATHODES; GALLIUM ALLOYS; GALLIUM NITRIDE; PHOTOCATHODES; PHOTOELECTRICITY;

CURVE FITTING;

EID: 79952083666 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3556656 Document Type: Article

Times cited : (70)

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