Surface states and accumulation nanolayer induced by Ba and Cs adsorption on the n-GaN(0 0 0 1) surface

Surface Science

Volumn 603, Issue 16, 2009, Pages 2474-2478

  Benemanskaya, G V ^a   Lapushkin, M N ^a   Timoshnev, S N ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Gallium nitride; Metal semiconductor interface; Quantum effects; Surface electronic phenomena; Threshold photoemission spectroscopy

Indexed keywords

ACCUMULATION LAYERS; CONDUCTION-BAND MINIMUM; ELECTRON ACCUMULATION; FABRY PEROT INTERFERENCE; GAN (0 0 0 1); IN-SITU; METAL-SEMICONDUCTOR INTERFACE; NANO LAYERS; P-POLARIZED; QUANTUM EFFECTS; SURFACE BANDS; SURFACE ELECTRONIC PHENOMENA; SURFACE PHOTOEMISSION; SURFACE STATE; THRESHOLD PHOTOEMISSION; THRESHOLD PHOTOEMISSION SPECTROSCOPY; TRANSPARENCY REGION; VISIBLE LIGHT;

ADSORPTION; BARIUM; CESIUM; ELECTRON MOBILITY; EMISSION SPECTROSCOPY; FERMI LEVEL; FERMIONS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT TRANSMISSION; LUMINESCENCE OF ORGANIC SOLIDS; PHOTOEMISSION; QUANTUM THEORY; SEMICONDUCTOR QUANTUM WIRES; SULFUR COMPOUNDS; TRANSPARENCY;

SEMICONDUCTING GALLIUM;

EID: 68149120491     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2009.05.022     Document Type: Article

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