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Volumn 85, Issue 8, 2004, Pages 1365-1367
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Electron accumulation layer at the Cs-covered GaN(0001) n-type surface
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Author keywords
[No Author keywords available]
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Indexed keywords
ADSORPTION;
ATOMIC FORCE MICROSCOPY;
CESIUM;
ELECTRIC SPACE CHARGE;
ENERGY GAP;
EPITAXIAL GROWTH;
FERMI LEVEL;
INTERFACES (MATERIALS);
LIGHT POLARIZATION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MONOLAYERS;
PHOTOCATHODES;
PHOTOEMISSION;
QUANTUM EFFICIENCY;
RAMAN SCATTERING;
BLOCH CURRENTS;
ELECTRON AFFINITY;
PHOTOEMISSION YIELD SPECTROSCOPY (PYS);
STOKES RAMAN SCATTERING (SRS);
GALLIUM NITRIDE;
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EID: 4544388479
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1785284 Document Type: Article |
Times cited : (28)
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References (14)
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