Prospect for high brightness III-nitride electron emitter

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3042-3046

  Machuca, Francisco ^a   Sun, Y ^a   Liu, Z ^a   Ioakeimidi, K ^a   Pianetta, P ^a   Pease, R F W ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CESIUM; EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; NITRIDES; OXIDATION; OXYGEN; PHOTOCATHODES; PHOTOEMISSION; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

GALLIUM NITRIDES; NEGATIVE ELECTRON AFFINITY (NEA);

SEMICONDUCTING FILMS;

EID: 0034316169     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1321270     Document Type: Article

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