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Volumn 123-124, Issue , 1998, Pages 28-32
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Electronic properties of cesium-covered GaN(0001) surfaces
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Author keywords
Cesium; Gallium nitride; Ionization energy; Negative electron affinity; Work function
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Indexed keywords
CESIUM;
DEPOSITION;
ELECTRONIC PROPERTIES;
FILM GROWTH;
IONIZATION OF SOLIDS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SURFACE PROPERTIES;
X RAY PHOTOELECTRON SPECTROSCOPY;
GALLIUM NITRIDES;
NEGATIVE ELECTRON AFFINITY;
NITRIDES;
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EID: 4544287228
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(97)00495-9 Document Type: Article |
Times cited : (42)
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References (14)
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