Negative electron affinity and electron emission at cesiated GaN and AlN surfaces

Applied Surface Science

Volumn 162, Issue , 2000, Pages 250-255

  Wu, C I ^a   Kahn, A ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CESIUM; CRYSTAL ORIENTATION; ELECTRON EMISSION; ELECTRONIC STRUCTURE; PHOTOEMISSION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE STRUCTURE; ULTRAVIOLET SPECTROSCOPY; X RAY SPECTROSCOPY;

ALUMINUM NITRIDE; GALLIUM NITRIDE; NEGATIVE ELECTRON AFFINITY (NEA); TOTAL YIELD SPECTROSCOPY; X RAY PHOTOEMISSION SPECTROSCOPY (XPS);

NITRIDES;

EID: 0034250369     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00200-2     Document Type: Article

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