Raman and TEM characterization of high fluence C implanted nanometric Si on insulator

Applied Surface Science

Volumn 258, Issue 19, 2012, Pages 7395-7400

  Dos Reis, R M S ^a   Maltez, R L ^a   Moreira, E C ^b   Dias, Y P ^b   Boudinov, H ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b UNIVERSIDADE FEDERAL DO PAMPA   (Brazil)

Author keywords

C implantation; Ion beam synthesis; Raman spectroscopy; SiC layer on insulator; TEM

Indexed keywords

CURVE FITTING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION BEAMS; RAMAN SPECTROSCOPY; SILICON ON INSULATOR TECHNOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

C IMPLANTATIONS; CARBON-IMPLANTATION; ION BEAM SYNTHESIS; SIC LAYER ON INSULATORS; STRUCTURAL EVALUATION; STRUCTURAL QUALITIES; TEM CHARACTERIZATION; TRANSMISSION ELECTRON MICROSCOPY (TEM) CHARACTERIZATIONS;

SILICON CARBIDE;

EID: 84861344020     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.04.044     Document Type: Article

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