Carbon redistribution in nanometric Si1-xCx layers upon ion beam synthesis of SiC by C implantation into SIMOX(111)

Journal of Physics D: Applied Physics

Volumn 43, Issue 39, 2010, Pages

  Dos Reis, R M S ^a   Maltez, R L ^a   Boudinov, H ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS ZONES; COMPOSITION CHANGES; COMPOSITION EVOLUTION; DRIVING FORCES; HIGH-RESOLUTION TEM; IMPLANTATION FLUENCE; ION BEAM SYNTHESIS; NANOMETRICS; RBS ANALYSIS; RUTHERFORD BACKSCATTERING SPECTROMETRY; SEPARATION BY IMPLANTATION OF OXYGENS; SI (1 1 1); STARTING MATERIALS; STRUCTURAL DIFFERENCES; STRUCTURAL QUALITIES; SUB-LAYERS; TEM;

ION BEAMS; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; SILICON OXIDES; TRANSMISSION ELECTRON MICROSCOPY;

SILICON;

EID: 78249263491     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/39/395401     Document Type: Article

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