Injection dependence of spontaneous radiative recombination in c-Si: Experiment, theoretical analysis, and simulation

NUSOD '05 - Proceedings of the 5th International Conference on Numerical Simulation of Optoelectronic Devices

Volumn 2005, Issue , 2005, Pages 47-48

  Altermatt, P P ^a   Geelhaar, F ^b,f   Trupke, T ^c   Dai, X ^c   Neisser, A ^d   Daub, E ^e  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b ETH ZURICH   (Switzerland)

^c UNIVERSITY OF NEW SOUTH WALES   (Australia)

^d HAHN MEITNER INSTITUT   (Germany)

^e SILTRONIC AG   (Germany)

^f ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; COULOMB BLOCKADE; MATHEMATICAL MODELS; NUMERICAL METHODS; SILICON;

AUGER RECOMBINATION; COULOMB ATTRACTION; COULOMB-ENHANCEMENT; INJECTION DENSITY;

CRYSTALLINE MATERIALS;

EID: 33746676326     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NUSOD.2005.1518128     Document Type: Conference Paper

References (14)

1. M. A. Green, J. Zhao, A. Wang, P. J. Reece, and M. Gal, "Efficient silicon light-emitting diodes", Nature vol. 412, pp. 805-808, 2001.
2. T. Trupke, J. Zhao, A. Wang, R. Corkish, and M. A. Green, "Very efficient light emission from bulk crystalline silicon", Appl. Phys. Lett. vol. 82, pp. 2996-2998, 2003.
3. H. Schlangenotto, H. Maeder, and W. Gerlach, "Temperature dependence of the radiative recombination coefficient in silicon", Phys. Stat. Solidi vol. A21, pp. 357-367, 1974.
4. A. Hangleiter, "Recombination and correlation of intrinsic electronic excitations in semiconductors" (in German), Habilitation Thesis, University of Stuttgart, Germany, 1992.
5. T. Trupke, M. A. Green, P. Würfel, P. P. Altermatt, A. Wang, J. Zhao, and R. Corkish, "Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon", J. Appl. Phys. vol. 94, pp. 4930-4937, 2003.
6. W. van Roosbroeck and W. Shockley, "Photon-radiative recombination of electrons and holes in germanium", Phys. Rev. vol. 94, pp. 1558-1560, 1954.
7. P. Würfel, "The chemical potential of radiation", J. Phys. Chem. vol. 15, pp. 3967-3985, 1982.
8. E. Daub and P. Würfel, "Ultralow values of the absorption coefficient of Si obtained from luminescence," Phys. Rev. Lett. vol. 74, pp. 1020-1023, 1995.
9. P. P. Altermatt, A. Schenk, F. Geelhaar, and G. Heiser, "Reassessment of the intrinsic carrier density in crystalline silicon in view of band gap narrowing," J. Appl. Phys. vol. 93, pp. 1598-1604, 2002.
10. A. Schenk, "Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation," J. Appl. Phys. vol. 84, pp. 3684-3695, 1998.
11. X. Dai, "High-efficiency n-type silicon solar cells", PhD Thesis, University of NSW, Sydney, Australia, 1994.
12. M. J. Keevers and M. A. Green, "Absorption edge of silicon from solar cell spectral response measurements," Appl. Phys. Lett. vol. 66, pp. 174-178, 1995.
13. A. Neisser and M. A. Green, "Very low absorption coefficients of silicon at low temperatures from spectral response measurements," Proc. 2nd World Conference on Photovoltaic Solar Energy Conversion, Vienna, Austria, pp. 136-139, 1998, (James&James, London, UK).
14. E. Yablonovitch and T. Gmitter, "Auger recombination in silicon at low carrier densities", Appl. Phys. Lett. vol. 49, pp. 587-589, 1986.