-
1
-
-
0030399938
-
Quasi-steady-state photoconductance, a new method for solar cell material and device characterization
-
Washington DC
-
R.A. Sinton, A. Cuevas, M Stuckings, Quasi-steady-state photoconductance, a new method for solar cell material and device characterization, in: Proceedings of the 25th IEEE PVSC, Washington DC, 1996, pp. 457460.
-
(1996)
Proceedings of the 25th IEEE PVSC
, pp. 457-460
-
-
Sinton, R.A.1
Cuevas, A.2
Stuckings, M.3
-
2
-
-
0000066852
-
Sensitivity and transient response of microwave reflection measurements
-
M. Schöfthaler, and R. Brendel Sensitivity and transient response of microwave reflection measurements J. Appl. Phys. 77 1995 3162 3173
-
(1995)
J. Appl. Phys.
, vol.77
, pp. 3162-3173
-
-
Schöfthaler, M.1
Brendel, R.2
-
4
-
-
0002523709
-
Impact of diffusion length distributions on the performance of mc-silicon solar cells
-
Vienna
-
W. Warta, J. Sutter, B.F. Wagner, R. Schindler, Impact of diffusion length distributions on the performance of mc-silicon solar cells, in: Proceedings of the Second WC PVSEC, Vienna, 1998, pp. 16501653.
-
(1998)
Proceedings of the Second WC PVSEC
, pp. 1650-1653
-
-
Warta, W.1
Sutter, J.2
Wagner, B.F.3
Schindler, R.4
-
5
-
-
0037396123
-
CELLO: An advanced LBIC measurement technique for solar cell local characterization
-
J. Carstensen, G. Popkirov, J. Bahr, and H.F. Föll CELLO: an advanced LBIC measurement technique for solar cell local characterization Sol. Energy Mater. Sol. Cells 76 2003 599 611
-
(2003)
Sol. Energy Mater. Sol. Cells
, vol.76
, pp. 599-611
-
-
Carstensen, J.1
Popkirov, G.2
Bahr, J.3
Föll, H.F.4
-
6
-
-
79955474750
-
Advances in infrared imaging methods for silicon material characterization
-
Milan
-
M.C. Schubert, M. The, P. Gundel, M. Kasemann, S. Pingel, W. Warta, Advances in infrared imaging methods for silicon material characterization, in: Proceedings of the 22nd EU PVSEC, Milan, 2007, pp. 3237.
-
(2007)
Proceedings of the 22nd EU PVSEC
, pp. 32-37
-
-
Schubert, M.C.1
The, M.2
Gundel, P.3
Kasemann, M.4
Pingel, S.5
Warta, W.6
-
7
-
-
22144480285
-
Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence
-
T. Fuyuki, H. Kondo, T. Yamazaki, Y. Takahashi, and Y. Uraoka Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence Appl. Phys. Lett. 86 2005 262108-1 262108-3
-
(2005)
Appl. Phys. Lett.
, vol.86
, pp. 2621081-2621083
-
-
Fuyuki, T.1
Kondo, H.2
Yamazaki, T.3
Takahashi, Y.4
Uraoka, Y.5
-
8
-
-
34547326879
-
Diffusion lengths of silicon solar cells from luminescence images
-
P. Würfel, T. Trupke, T. Puzzer, E. Schäffer, W. Warta, and S.W. Glunz Diffusion lengths of silicon solar cells from luminescence images J. Appl. Phys. 101 2007 123110-1 123110-10
-
(2007)
J. Appl. Phys.
, vol.101
, pp. 1231101-12311010
-
-
Würfel, P.1
Trupke, T.2
Puzzer, T.3
Schäffer, E.4
Warta, W.5
Glunz, S.W.6
-
9
-
-
66549116072
-
Determination of the effective diffusion length of silicon solar cells from photoluminescence
-
D. Hinken, K. Bothe, K. Ramspeck, S. Herlufsen, and R. Brendel Determination of the effective diffusion length of silicon solar cells from photoluminescence J. Appl. Phys. 105 2009 104516-1 104516-6
-
(2009)
J. Appl. Phys.
, vol.105
, pp. 1045161-1045166
-
-
Hinken, D.1
Bothe, K.2
Ramspeck, K.3
Herlufsen, S.4
Brendel, R.5
-
10
-
-
76449114793
-
Spatially resolved determination of dark saturation current and series resistance of silicon solar cells
-
M. Glatthaar, J. Haunschild, M. Kasemann, J. Giesecke, W. Warta, and S. Rein Spatially resolved determination of dark saturation current and series resistance of silicon solar cells Phys. Stat. Sol. (RRL) 4 2010 13 15
-
(2010)
Phys. Stat. Sol. (RRL)
, vol.4
, pp. 13-15
-
-
Glatthaar, M.1
Haunschild, J.2
Kasemann, M.3
Giesecke, J.4
Warta, W.5
Rein, S.6
-
11
-
-
27344442272
-
Self-consistent calibration of photoluminescence and photoconductance lifetime measurements
-
T. Trupke, R.A. Bardos, and M.D. Abbot Self-consistent calibration of photoluminescence and photoconductance lifetime measurements Appl. Phys. Lett. 87 2005 184102-1 184102-3
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 1841021-1841023
-
-
Trupke, T.1
Bardos, R.A.2
Abbot, M.D.3
-
12
-
-
77956366081
-
Minority carrier lifetime in silicon wafers from quasi-steady-state photoluminescence
-
J.A. Giesecke, M.C. Schubert, D. Walter, and W. Warta Minority carrier lifetime in silicon wafers from quasi-steady-state photoluminescence Appl. Phys. Lett. 97 2010 092109-1 092109-3
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 0921091-0921093
-
-
Giesecke, J.A.1
Schubert, M.C.2
Walter, D.3
Warta, W.4
-
13
-
-
84857448835
-
Microsecond carrier lifetime measurements in silicon via quasi-steady-state photoluminescence
-
(submitted for publication)
-
J.A. Giesecke, W. Warta, Microsecond carrier lifetime measurements in silicon via quasi-steady-state photoluminescence, Prog. Photovolt.: Res. Appl. (submitted for publication).
-
Prog. Photovolt.: Res. Appl.
-
-
Giesecke, J.A.1
Warta, W.2
-
14
-
-
78751648337
-
Minority carrier lifetime imaging of silicon wafers calibrated by quasi-steady-state photoluminescence
-
J.A. Giesecke, M.C. Schubert, B. Michl, F. Schindler, and W. Warta Minority carrier lifetime imaging of silicon wafers calibrated by quasi-steady-state photoluminescence Sol. Energy Mater. Sol. Cells 95 2011 1011 1018
-
(2011)
Sol. Energy Mater. Sol. Cells
, vol.95
, pp. 1011-1018
-
-
Giesecke, J.A.1
Schubert, M.C.2
Michl, B.3
Schindler, F.4
Warta, W.5
-
15
-
-
4244019049
-
The chemical potential of radiation
-
P. Würfel The chemical potential of radiation J. Phys. C: Solid State Phys. 15 1982 3967 3985
-
(1982)
J. Phys. C: Solid State Phys.
, vol.15
, pp. 3967-3985
-
-
Würfel, P.1
-
16
-
-
4244141523
-
Generalized Plancks radiation law for luminescence via indirect transitions
-
P. Würfel, S. Finkbeiner, and E. Daub Generalized Plancks radiation law for luminescence via indirect transitions Appl. Phys. A 60 1995 67 70
-
(1995)
Appl. Phys. A
, vol.60
, pp. 67-70
-
-
Würfel, P.1
Finkbeiner, S.2
Daub, E.3
-
18
-
-
79955484803
-
Impact of compensated solar-grade silicon on czochralski silicon wafers and solar cells
-
Hamburg
-
S. Rein, W. Kwapil, J. Geilker, G. Emanuel, M. Spitz, I. Reis, A. Weil, D. Biro, M. Glatthaar, A.-K. Soiland, E. Enebakk, R. Tronstad, Impact of compensated solar-grade silicon on czochralski silicon wafers and solar cells, in: Proceedings of the 24th EU PVSEC, Hamburg, 2009, pp. 11401147.
-
(2009)
Proceedings of the 24th EU PVSEC
, pp. 1140-1147
-
-
Rein, S.1
Kwapil, W.2
Geilker, J.3
Emanuel, G.4
Spitz, M.5
Reis, I.6
Weil, A.7
Biro, D.8
Glatthaar, M.9
Soiland, A.-K.10
Enebakk, E.11
Tronstad, R.12
-
19
-
-
79952996966
-
Doping concentration and mobility in compensated material: Comparison of different determination methods
-
Valencia
-
J. Geilker, W. Kwapil, I. Reis, S. Rein, Doping concentration and mobility in compensated material: comparison of different determination methods, in: Proceedings of the 25th EU PVSEC, Valencia, 2010, pp. 13231327.
-
(2010)
Proceedings of the 25th EU PVSEC
, pp. 1323-1327
-
-
Geilker, J.1
Kwapil, W.2
Reis, I.3
Rein, S.4
-
20
-
-
0001339353
-
Improved value for the silicon intrinsic carrier concentration from 275 to 375 K
-
A. Sproul, and M.A. Green Improved value for the silicon intrinsic carrier concentration from 275 to 375 K J. Appl. Phys. 70 1991 846 854
-
(1991)
J. Appl. Phys.
, vol.70
, pp. 846-854
-
-
Sproul, A.1
Green, M.A.2
-
21
-
-
0013224923
-
Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K
-
K. Misiakos, and D. Tsamakis Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K J. Appl. Phys. 74 1993 3293 3297
-
(1993)
J. Appl. Phys.
, vol.74
, pp. 3293-3297
-
-
Misiakos, K.1
Tsamakis, D.2
-
22
-
-
0013226142
-
Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation
-
A. Schenk Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation J. Appl. Phys. 84 1998 3684 3695 (Pubitemid 128600505)
-
(1998)
Journal of Applied Physics
, vol.84
, Issue.7
, pp. 3684-3695
-
-
Schenk, A.1
-
23
-
-
0037320144
-
Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing
-
P.P. Altermatt, A. Schenk, F. Geelhaar, and G. Heiser Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing J. Appl. Phys. 93 2003 1598 1604
-
(2003)
J. Appl. Phys.
, vol.93
, pp. 1598-1604
-
-
Altermatt, P.P.1
Schenk, A.2
Geelhaar, F.3
Heiser, G.4
-
24
-
-
0141886883
-
Averaging of laterally inhomogeneous lifetimes for one-dimensional modelling of solar cells
-
J. Isenberg, J. Dicker, and W. Warta Averaging of laterally inhomogeneous lifetimes for one-dimensional modelling of solar cells J. Appl. Phys. 94 2003 4122 4130
-
(2003)
J. Appl. Phys.
, vol.94
, pp. 4122-4130
-
-
Isenberg, J.1
Dicker, J.2
Warta, W.3
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