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Optimization of pitch-split double patterning photoresist for applications at the 16nm node
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Process window centering for 22nm lithography
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Buengener, R., Boye, C., Rhoads, B., Chong, S., Tejwani, C., Burns, S., Stamper, A., Nafisi, K., Brodsky, C., Fan, S., Kini, S., Hahn, R., "Process Window Centering for 22nm Lithography", Proceedings of ASMC, pp. 174-178, (2010).
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Novel technique to identify systematic and random defects during 65 nm and 45nm process development for faster yield learning
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Optical beam enhanced defect detection with electron beam inspection tools
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Characterization of contact module failure mechanisms for SOI technology using E-beam inspection and in-line TEM
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Voltage contrast inspection methodology for in-line detection of missing spacer and other non-visual defects
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Detection and verification of silicide pipe defects on SOI technology using voltage contrast inspection
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Patterson, O. D., Wu, H.H., Kang, H. H., Strane, J., Lavoie, C., Barth, K., Ouyang, Xu, "Detection and Verification of Silicide Pipe Defects on SOI Technology using Voltage Contrast Inspection", Proceedings of ISTFA, pp. 270-274, (2007).
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