Process Window Centering for 22 nm lithography

ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings

Volumn , Issue , 2010, Pages 174-178

  Buengener, Ralf ^a   Boye, Carol ^b   Rhoads, Bryan N ^b   Chong, Sang Y ^b   Tejwani, Charu ^b   Burns, Sean D ^b   Stamper, Andrew D ^b   Nafisi, Kourosh ^b   Brodsky, Colin J ^b   Fan, Susan S ^b   Kini, Sumanth ^c   Hahn, Roland ^c  

^a IBM MICROELECTRONICS   (United States)

^b IBM   (United States)

^c KLA TENCOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BRIGHTFIELD; CRITICAL DIMENSION; DEFECT INSPECTION; DEFECT INSPECTION SYSTEM; DEVELOPMENT FACILITY; ENTIRE DIE; KLA-TENCOR; MATRIX; PROCESS WINDOW; RANDOM DEFECTS;

DEFECTS; INSPECTION; MANUFACTURE;

LITHOGRAPHY;

EID: 77957591600     PISSN: 10788743     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASMC.2010.5551447     Document Type: Conference Paper

References (5)

1. S. S. Chiua et al. "Process Window Monitoring - An emerging requirement for efficient low-k1 lithography" in Optical Microlithography XVI, A. Yen, Editor, Proceedings of SPIE Vol. 5040 (2003), p. 871-881.
2. H. Kang et al. "Comparative Study of Process Window Identification Methods for 45 nm Device and Beyond" in Metrology, Inspection, and Process Control for Microlithography XXIII, J. A. Allgair, C. J. Raymond, Eds. 2009 Proc. of SPIE Vol. 7272, 72723D.
3. M. Brodsky et al. "Process-Window Sensitive Full-Chip Inspection for Design-to-Silicon Optimization in the Sub-Wavelength Era", 2005 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, p. 64-71.
4. A. Poock, S. McGowan, F. Weisbuch, G. Schnasse, and R. Ghaskadvi, "Complementary Techniques Identify OPC Hotspots", Semiconductor International, 4/1/2009.
5. U. Streller et al. "Development and implementation of PWQ on patterned wafer darkfield inspection systems" in Metrology, Inspection, and Process Control for Microlithography XXIII, J. A. Allgair, C. J. Raymond, Eds. 2009 Proc. of SPIE Vol. 7272, 72723J.