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Volumn , Issue , 2010, Pages 270-276

Characterization of contact module failure mechanisms for SOI technology using E-beam inspection and in-line TEM

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL PLANARIZATIONS; DEFECT SITES; E-BEAM INSPECTION; ETCH PROCESS; FAILURE MECHANISM; IN-LINE; SOI TECHNOLOGY; TEM; TEST STRUCTURE; TRANSMISSION ELECTRON MICROSCOPE; VOLTAGE CONTRAST; YIELD LEARNING;

EID: 77957552164     PISSN: 10788743     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASMC.2010.5551467     Document Type: Conference Paper
Times cited : (13)

References (11)
  • 4
    • 28744453455 scopus 로고    scopus 로고
    • A novel method for in-line process monitoring by measuring the gray level values of SEM images
    • J. Jau, W. Fang, H. Xiao, "A Novel Method for In-line Process Monitoring by Measuring the Gray Level Values of SEM Images", Proceedings of ISSM, pp. 143-146, 2005.
    • (2005) Proceedings of ISSM , pp. 143-146
    • Jau, J.1    Fang, W.2    Xiao, H.3
  • 5
    • 27644503614 scopus 로고    scopus 로고
    • E-beam inspection of SOI wafers for the evaluation of barrier nitride RIE etching
    • IEEE/SEMI issue, April
    • A. Ache, K. Wu, N. Rowand, "E-beam inspection of SOI wafers for the evaluation of barrier nitride RIE etching," Advanced Semiconductor Manufacturing Conference and Workshop, IEEE/SEMI issue, pp. 124-126, April 2005.
    • (2005) Advanced Semiconductor Manufacturing Conference and Workshop , pp. 124-126
    • Ache, A.1    Wu, K.2    Rowand, N.3
  • 6
    • 71649097746 scopus 로고    scopus 로고
    • Advanced SOI CMOS transistor technology for high performance microprocessors
    • Dec.
    • M. Horstmann, "Advanced SOI CMOS transistor technology for high performance microprocessors," Solid-State Electronics, vol. 53, no. 12, pp. 1212-1219, Dec. 2009.
    • (2009) Solid-State Electronics , vol.53 , Issue.12 , pp. 1212-1219
    • Horstmann, M.1
  • 8
    • 77957566678 scopus 로고    scopus 로고
    • Contact size dependence of highly selective self-aligned contact etching with polymer formation and its mechanism
    • IEEE/SEMI issue, Sep.
    • Y. H. Liu, Y. L. Tu, W. Y. Lain, B. W. Chan, M. Chi, "Contact size dependence of highly selective self-aligned contact etching with polymer formation and its mechanism," Advanced Semiconductor Manufacturing Conference and Workshop, IEEE/SEMI issue, pp. 153-156, Sep. 2000.
    • (2000) Advanced Semiconductor Manufacturing Conference and Workshop , pp. 153-156
    • Liu, Y.H.1    Tu, Y.L.2    Lain, W.Y.3    Chan, B.W.4    Chi, M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.