Voltage contrast inspection methodology for inline detection of missing spacer and other nonvisual defects

IEEE Transactions on Semiconductor Manufacturing

Volumn 21, Issue 3, 2008, Pages 322-328

  Patterson, Oliver D ^a,b   Wu, Kevin ^c   Mocuta, Dan ^b   Nafisi, Kourosh ^b  

^a IEEE

^b IBM   (United States)

^c KLA TENCOR CORPORATION   (United States)

Author keywords

Defect inspection; Defect reduction; E beam inspection; Inspection scanning electron microscope (SEM); Missing spacer; Nonvisual defects; Voltage contrast

Indexed keywords

INSPECTION; INSPECTION EQUIPMENT; SEMICONDUCTOR DEVICE MANUFACTURE; SIGNAL TO NOISE RATIO; TECHNOLOGY; TESTING; VOLTAGE MEASUREMENT;

DEFECT INSPECTION; DEFECT REDUCTION; E-BEAM INSPECTION; FASTER LEARNING; INSPECTION SCANNING ELECTRON MICROSCOPE (SEM); MISSING SPACER; NONVISUAL DEFECTS; SEMICONDUCTOR TECHNOLOGIES; TEST STRUCTURES; VOLTAGE CONTRAST;

DEFECTS;

EID: 49249119093     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2008.2001205     Document Type: Conference Paper

References (7)

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