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Chinese Physics B

Volumn 21, Issue 5, 2012, Pages

Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

(6) Chen, Jun a,b Fan, Guang Han a Zhang, Yun Yan c Pang, Wei b Zheng, Shu Wen a Yao, Guang Rui a

a SOUTH CHINA NORMAL UNIVERSITY (China)

b GUANGDONG UNIVERSITY OF TECHNOLOGY (China)

c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

Author keywords

electron blocking layer; internal quantum efficiency; light emitting diode

Indexed keywords

AL CONTENT; ALGAN; BLUE LIGHT-EMITTING; ELECTRON LEAKAGE; ELECTRON-BLOCKING LAYER; ENERGY-BAND DIAGRAM; HOLE INJECTION; INJECTION CURRENTS; INTERNAL QUANTUM EFFICIENCY; OPTICAL PERFORMANCE; OUTPUT POWER; PERFORMANCE IMPROVEMENTS; SIMULATED EMISSION; SPECTRUM INTENSITY;

DIODES; ELECTRONS; EMISSION SPECTROSCOPY; GALLIUM COMPOUNDS; QUANTUM EFFICIENCY;

LIGHT EMITTING DIODES;

EID: 84860805429 PISSN: 16741056 EISSN: None Source Type: Journal
DOI: 10.1088/1674-1056/21/5/058504 Document Type: Article

Times cited : (10)

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