Field-effect modulation of conductance in VO 2 nanobeam transistors with HfO 2 as the gate dielectric

Applied Physics Letters

Volumn 99, Issue 6, 2011, Pages

  Sengupta, Shamashis ^a   Wang, Kevin ^b   Liu, Kai ^b   Bhat, Ajay K ^a   Dhara, Sajal ^a   Wu, Junqiao ^b   Deshmukh, Mandar M ^a  

^a TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

^b Lawrence Berkeley National Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD-EFFECT; GATE SWEEP; GATE VOLTAGES; INSULATING PHASE; INSULATOR-TO-METAL TRANSITIONS; LOW-TO-HIGH; PHASE LAGS;

GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM OXIDES; HYSTERESIS; METAL INSULATOR TRANSITION; NANOWIRES;

ELECTRIC CONDUCTIVITY;

EID: 84860388949     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3624896     Document Type: Article

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