Strain-mediated phase control and electrolyte-gating of electron-doped manganites

Advanced Materials

Volumn 23, Issue 48, 2011, Pages 5822-5827

  Xiang, Ping Hua ^a,b   Asanuma, Shutaro ^a,b   Yamada, Hiroyuki ^a   Inoue, Isao H ^a   Sato, Hiroshi ^a   Akoh, Hiroshi ^a,b   Sawa, Akihito ^a   Ueno, Kazunori ^b,c   Yuan, Hongtao ^c   Shimotani, Hidekazu ^c   Kawasaki, Masashi ^c,d   Iwasa, Yoshihiro ^c,d  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d RIKEN   (Japan)

Author keywords

correlated electron oxides; field effect transistors; metal insulator transition; phase diagram

Indexed keywords

CONDUCTIVITY MODULATION; ELECTRIC DOUBLE LAYER; ELECTRON-DOPED; GATE VOLTAGES; MANGANITE FILMS; STRAIN PHASE DIAGRAM;

FIELD EFFECT TRANSISTORS; MANGANESE OXIDE; MANGANITES; METAL INSULATOR BOUNDARIES; PHASE DIAGRAMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR INSULATOR BOUNDARIES;

METAL INSULATOR TRANSITION;

ELECTROLYTE; MANGANESE DERIVATIVE; MANGANITE; METAL;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; ELECTRON; ELECTRONICS; EQUIPMENT DESIGN; INSTRUMENTATION; MAGNETISM; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PRESSURE; SEMICONDUCTOR; TEMPERATURE; X RAY DIFFRACTION;

ELECTROLYTES; ELECTRONICS; ELECTRONS; EQUIPMENT DESIGN; MAGNETICS; MANGANESE COMPOUNDS; MATERIALS TESTING; METALS; MICROSCOPY, ATOMIC FORCE; NANOTECHNOLOGY; PRESSURE; TEMPERATURE; TRANSISTORS, ELECTRONIC; X-RAY DIFFRACTION;

EID: 83755172684     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201102968     Document Type: Article

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