Structure, stability and photoelectronic properties of transition films from amorphous to microcrystalline silicon

Journal of Crystal Growth

Volumn 281, Issue 2-4, 2005, Pages 344-348

  Hao, Huiying ^a,b   Liao, Xianbo ^a   Zeng, Xiangbo ^a   Diao, Hongwei ^a   Xu, Ying ^a   Kong, Guanglin ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b CHINA UNIVERSITY OF GEOSCIENCES   (China)

Author keywords

A1. Nanostructures; A2. Growth from vapor; A3. Chemical vapor deposition processes; B2. Semiconducting silicon

Indexed keywords

AMORPHOUS MATERIALS; BINARY MIXTURES; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; HYDROGENATION; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; VOLUME FRACTION;

CHEMICAL VAPOR DEPOSITION PROCESSES; GROWTH FROM VAPOR; NANOSTRUCTURES; PHOTOELECTRONIC PROPERTIES;

SEMICONDUCTING FILMS;

EID: 22144449665     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.04.067     Document Type: Article

References (8)

1. M. Medudre, R. Meaudre, R. Butte', and S. Vignoli J. Appl. phys. 86 1999 946
2. P. Roca i Cabarrocas, A. Fontcuberta, i Morral, and Y. Poissant Thin Solid Filims 39 2002 403
3. P.M. Voylesa J. Appl. Phys. 90 2001 4437
4. J.M. Pearce, R.J. Koval, A.S. Ferlauto, R.W. Collins, and C.R. Wronski Appl. Phys. Lett. 77 2000 3093
5. C. Das, and S. Ray Thin Solid Films 81 2002 403
6. S. Sheng, X. Liao, and G. Kong Appl. Phys. Lett. 73 1998 336
7. S. Zhang, X. Liao, Y. Wang, H. Diao, Y. Xu, Z. Hu, X. Zeng, and G. Kong 29th IEEE PVSC 2002 2198
8. K. Lord, B. Yan, J. Yang, and S. Guha Appl. Phys. Lett. 79 2001 3800