Impact of a few dopant positions controlled by deterministic single-ion doping on the transconductance of field-effect transistors

Applied Physics Letters

Volumn 99, Issue 6, 2011, Pages

  Hori, Masahiro ^a   Shinada, Takahiro ^b   Ono, Yukinori ^c   Komatsubara, Akira ^a   Kumagai, Kuninori ^a   Tanii, Takashi ^a   Endoh, Tetsuo ^d   Ohdomari, Iwao ^a  

^a WASEDA UNIVERSITY   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL FACTORS; DEVICE PERFORMANCE; ELECTROSTATIC POTENTIALS; IMPURITY ATOMS; INJECTION VELOCITY; RANDOM DOPANTS; SINGLE-ION;

ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE; TRANSISTORS; TRANSPORT PROPERTIES;

FIELD EFFECT TRANSISTORS;

EID: 84860389332     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3622141     Document Type: Article

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