Influence of secondary electron detection efficiency on controllability of dopant ion number in single ion implantation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 6 A, 1999, Pages 3419-3421

  Shinada, Takahiro ^a   Ishikawa, Atsuki ^a   Fujita, Makoto ^a   Yamashita, Keisuke ^a   Ohdomari, Iwao ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS; SEMICONDUCTOR DEVICE STRUCTURES;

FOCUSED ION BEAMS; SECONDARY ELECTRON DETECTION; SINGLE ION IMPLANTATION;

ION IMPLANTATION;

EID: 0032679455     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3419     Document Type: Article

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