Development of single-ion implantation - controllability of implanted ion number

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 677-683

  Matsukawa, T ^a   Fukai, T ^a   Suzuki, S ^a   Hara, K ^a   Koh, M ^a   Ohdomari, I ^a  

^a NONE

Author keywords

CR 39; Doping; FIB; Fluctuation; Single ion implantation

Indexed keywords

ELECTRONS; ION BEAMS; PARTICLE BEAM EXTRACTION; PARTICLE DETECTORS; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS;

SINGLE ION IMPLANTATION;

ION IMPLANTATION;

EID: 0031548444     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80163-8     Document Type: Article

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