The role of nitrogen in HfSiON defect passivation

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 921-924

  O'Connor, R ^a,b   Aoulaiche, M ^a   Pantisano, L ^a   Shickova, A ^a   Degraeve, R ^a   Kaczer, B ^a   Groeseneken, G ^a,c  

^a IMEC   (Belgium)

^b DUBLIN CITY UNIVERSITY   (Ireland)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Dielectric; Hafnium silicate; MOSFET; NBTI; Nitrogen; SILC

Indexed keywords

DIELECTRIC; HAFNIUM SILICATE; MOSFET; NBTI; SILC;

DEFECTS; DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; PASSIVATION; SILICATES; THERMODYNAMIC STABILITY;

NITROGEN;

EID: 70449105963     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173381     Document Type: Conference Paper

References (5)

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3. R. O'Connor, L. Pantisano, R. Degraeve, T. Kauerauf, B. Kaczer, P.J. Roussel, G. Groeseneken, "SILC defect generation spectroscopy in HfSiON using constant voltage stress and substrate hot electron injection" Proc. IRPS 2008, pp.324-329, Phoenix, USA.
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