Mechanism for generation of the phonon-energy-coupling enhancement effect for ultrathin oxides on silicon

Applied Physics Letters

Volumn 91, Issue 22, 2007, Pages

  Chen, Zhi ^a  

^a UNIVERSITY OF KENTUCKY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; OXIDE FILMS; RAPID THERMAL PROCESSING; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY;

DESTRUCTIVE STRUCTURE; OXIDE STRUCTURE; PHONON-ENERGY COUPLING; ULTRATHIN OXIDES;

SILICA;

EID: 36549079017     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2820383     Document Type: Article

References (5)

1. Z. Chen, J. Guo, and C. B. Samantaray, 2005 International Semiconductor Device Research Symposium Proceedings (IEEE, Bethesda, MD, 2005), p. 240.
2. Z. Chen, J. Guo, and F. Yang, Appl. Phys. Lett. 88, 082905 (2006).
3. Z. Chen and J. Guo, Solid-State Electron. 50, 1004 (2006).
4. C. B. Samantaray and Z. Chen, Appl. Phys. Lett. 89, 162903 (2006).
5. P. Ong and Z. Chen, Appl. Phys. Lett. 90, 113516 (2007).