Mechanism of date retention improvement by high temperature annealing of Al2O3 blocking layer in flash memory device

Japanese Journal of Applied Physics

Volumn 50, Issue 4 PART 2, 2011, Pages

  Park, Jong Kyung ^a   Park, Youngmin ^a   Lee, Seok Hee ^a   Lim, Sung Kyu ^b   Oh, Jae Sub ^b   Joo, Moon Sig ^c   Hong, Kwon ^c   Cho, Byung Jin ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b National Nano Fab Center (NNFC)   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING LAYERS; CHARGE LOSS; CHARGE TRAP; CONDUCTION BAND OFFSET; DATA RETENTION; EXPERIMENTAL EVIDENCE; FLASH MEMORY DEVICES; HIGH TEMPERATURE; HIGH-TEMPERATURE ANNEALING; NITROGEN ANNEALING; OXYGEN ANNEALING; RETENTION IMPROVEMENT; RETENTION PROPERTIES; TRAP ASSISTED TUNNELING; UNDERLYING MECHANISM;

ALUMINUM; ANNEALING; ELECTRON MOBILITY; HETEROJUNCTIONS; OXYGEN; THERMIONIC EMISSION;

FLASH MEMORY;

EID: 79955392250     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.04DD07     Document Type: Article

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