Injection and detection of spin in a semiconductor by tunneling via interface states

Physical Review B - Condensed Matter and Materials Physics

Volumn 85, Issue 13, 2012, Pages

  Jansen, R ^a   Deac, A M ^b   Saito, H ^a   Yuasa, S ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84860126122     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.85.134420     Document Type: Article

References (33)

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32. G 1) to zero is not sufficient, as this does not remove the charge current and also not the complete spin current.
33. s, 2 between localized states and the channel since this is proportional to Δ μ ls - Δ μ ch. The spin accumulation in the localized states then has to increase to restore the balance of the spin currents going in and out. The relative effect is small when Δ μ ls > Δ μ ch.