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Volumn 61, Issue 13, 2000, Pages 9047-9050

Magnetoresistance in doped magnetic tunnel junctions: Effect of spin scattering and impurity-assisted transport

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Indexed keywords


EID: 0000834921     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.9047     Document Type: Article
Times cited : (127)

References (28)
  • 26
    • 3643145185 scopus 로고    scopus 로고
    • More recently, (Formula presented) junctions with Al thickness of 12.5, 14, and (Formula presented), showed JMR of (Formula presented), with no systematic dependence on barrier thickness
    • J. S. Moodera, E. F. Gallagher, K. Robinson, and J. Nowak, Appl. Phys. Lett. 70, 3050 (1997).More recently, (Formula presented) junctions with Al thickness of 12.5, 14, and (Formula presented), showed JMR of (Formula presented), with no systematic dependence on barrier thickness.
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 3050
    • Moodera, J.1    Gallagher, E.2    Robinson, K.3    Nowak, J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.