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Volumn 102, Issue 17, 2009, Pages

Spin-polarized inelastic tunneling through insulating barriers

(10) Lu, Y a,b Tran, M a,b Jaffres H a,b Seneor, P a,b Deranlot, C a,b Petroff, F a,b George, J M a,b Lepine B c Ababou, S c Jezequel G c

a CNRS (France)

b UNIVERSITÉ PARIS SACLAY (France)

c UNIVERSITÉ DE RENNES 1 (France)

Author keywords

[No Author keywords available]

Indexed keywords

HOPPING TRANSPORTS; INELASTIC TUNNELING; INSULATING BARRIERS; LOCALIZED STATE; MAGNETIC TUNNEL JUNCTIONS; MAGNETO-RESISTANCE EFFECTS; MGO BARRIERS; NON-MAGNETIC; SPIN-POLARIZATION; SPIN-POLARIZED;

BORON; COBALT COMPOUNDS; ELECTRIC RESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; SEMICONDUCTOR JUNCTIONS; TUNNEL JUNCTIONS; TUNNELING (EXCAVATION);

SPIN DYNAMICS;

EID: 65549154336 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.102.176801 Document Type: Article

Times cited : (62)

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