Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells

Applied Physics Letters

Volumn 100, Issue 16, 2012, Pages

  Hu, Yan Ling ^a   Farrell, Robert M ^a   Neufeld, Carl J ^a   Iza, Michael ^a   Cruz, Samantha C ^a   Pfaff, Nathan ^a   Simeonov, Dobri ^a   Keller, Stacia ^a   Nakamura, Shuji ^a   Denbaars, Steven P ^a   Mishra, Umesh K ^a   Speck, James S ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM PROBE TOMOGRAPHY; BARRIER LAYERS; CAP LAYER THICKNESS; GAN CAP LAYERS; HIGH-ANGLE ANNULAR DARK FIELDS; HIGHER TEMPERATURES; INDIUM CONTENT; INGAN/GAN; LOW TEMPERATURES;

GALLIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84859994541     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4704189     Document Type: Article

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