Origin of hot carriers in InGaN-based quantum-well solar cells

IEEE Electron Device Letters

Volumn 32, Issue 2, 2011, Pages 179-181

  Lai, K Y ^a   Lin, G J ^a   Chen, C Y ^a   Lai, Y L ^b   He, J H ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b GENESIS PHOTONICS INC   (Taiwan)

Author keywords

Electron carriers; gallium compounds; quantum wells (QWs); solar cells

Indexed keywords

COMPOSITIONAL FLUCTUATIONS; CRYSTAL QUALITIES; ELECTRON CARRIER; MULTIPLE QUANTUM WELLS; QUANTUM WELL; QUANTUM-WELL SOLAR CELLS; SHALLOW DONORS; THERMALLY ACTIVATED;

CONVERSION EFFICIENCY; GALLIUM; GALLIUM COMPOUNDS; HOT CARRIERS; SOLAR CELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79151469012     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2091619     Document Type: Article

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