Efficiency droop in AlGaInP and GaInN light-emitting diodes

Applied Physics Letters

Volumn 100, Issue 11, 2012, Pages

  Shim, Jong In ^a   Han, Dong Pyo ^a   Kim, Hyunsung ^a   Shin, Dong Soo ^a   Lin, Guan Bo ^b   Meyaard, David S ^b   Shan, Qifeng ^c   Cho, Jaehee ^b   Fred Schubert, E ^b,c   Shim, Hyunwook ^d   Sone, Cheolsoo ^d  

^a Hanyang University   (South Korea)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c Rensselaer Polytechnic Institute   (United States)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ALGAINP; ALGAINP LEDS; CARRIER LEAKAGE; CRYOGENIC TEMPERATURES; INJECTION EFFICIENCY; LOW TEMPERATURES; P-N JUNCTION; ROOM TEMPERATURE;

CARRIER CONCENTRATION; CARRIER MOBILITY; EFFICIENCY; LIGHT EMISSION;

LIGHT EMITTING DIODES;

EID: 84859986056     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3694044     Document Type: Article

References (18)

1. J. Piprek, Phys. Status Solidi A 207, 2217 (2010). 10.1002/pssa.201026149
2. J.-I. Shim, H. Kim, D.-S. Shin, and H.-Y. Ryu, J. Korean Phys. Soc. 58, 503 (2011). 10.3938/jkps.58.503
3. D. S. Meyaard, Q. Shan, Q. Dai, J. Cho, E. F. Schubert, M.-H. Kim, and C. Sone, Appl. Phys. Lett. 99, 041112 (2011). 10.1063/1.3618673
4. D. S. Meyaard, G.-B. Lin, Q. Shan, J. Cho, E. F. Schubert, H. Shim, M.-H. Kim, and C. Sone, Appl. Phys. Lett. 99, 251115 (2011). 10.1063/1.3671395
5. I. V. Rozhansky and D. A. Zakheim, Semiconductors 40, 839 (2006). 10.1134/S1063782606070190
6. M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, Appl. Phys. Lett. 91, 183507 (2007). 10.1063/1.2800290
7. J. Xu, M. F. Schubert, A. N. Noemaun, D. Zhu, J. K. Kim, E. F. Schubert, M. H. Kim, H. J. Chung, S. Yoon, C. Sone, Appl. Phys. Lett. 94, 011113 (2009). 10.1063/1.3058687
8. T. Mukai, M. Yamada, and S. Nakamura, Jpn. J. Appl. Phys. 38, 3976 (1999). 10.1143/JJAP.38.3976
9. Y. Yang, X. A. Cao, and C. Yan, IEEE Trans. Electron Devices 55, 1771 (2008). 10.1109/TED.2008.923561
10. K. T. Delaney, P. Rinke, and C. G. Van de Walle, Appl. Phys. Lett. 94, 191109 (2009). 10.1063/1.3133359
11. Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, Appl. Phys. Lett. 91, 141101 (2007). 10.1063/1.2785135
12. E. F. Schubert, Light-Emitting Diodes, 2nd ed. (Cambridge University Press, Cambridge, 2006).
13. N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, A. S. Zubrilov, Y. S. Lelikov, P. E. Latyshev, Y. T. Rebane, A. I. Tsyuk, and Y. G. Shreter, Appl. Phys. Lett. 96, 133502 (2010). 10.1063/1.3367897
14. J. Wang, L. Wang, W. Zhao, Z. Hao, and Y. Luo, Appl. Phys. Lett. 97, 201112 (2010). 10.1063/1.3520139
15. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley, Hoboken, 2007).
16. D. P. Bour, D. W. Treat, R. L. Thornton, R. S. Geels, and D. F. Welch, IEEE J. Quantum Electron. 29, 1337 (1993). 10.1109/3.236147
17. S. A. Wood, C. H. Molloy, P. M. Smowton, P. Blood, D. J. Somerford, and C. C. Button, Appl. Phys. Lett. 75, 1748 (1999). 10.1063/1.124807
18. S. A. Wood, C. H. Molloy, P. M. Smowton, P. Blood, and C. C. Button, IEEE J. Quantum Electron. 36, 742 (2000). 10.1109/3.845732