Minority carrier effects in GaInP laser diodes

IEEE Journal of Quantum Electronics

Volumn 36, Issue 6, 2000, Pages 742-750

  Wood, S A ^a   Molloy, C H ^a   Smowton, P M ^a   Blood, Peter ^a   Button, C C ^b  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DIFFUSION IN SOLIDS; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; STRUCTURE (COMPOSITION); THERMAL EFFECTS;

ALUMINUM GALLIUM INDIUM PHOSPHIDE LASER DIODE; GALLIUM INDIUM PHOSPHIDE LASER DIODES; MINORITY CARRIER EFFECTS; TIME OF FLIGHT EXPERIMENT; TOP CONTACT WINDOW;

SEMICONDUCTOR LASERS;

EID: 0033701898     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.845732     Document Type: Article

References (13)

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