A simple four-point-bending setup for measurement of mechanical stress on silicon field-effect transistors

Measurement: Journal of the International Measurement Confederation

Volumn 44, Issue 5, 2011, Pages 871-874

  Kang, Ting Kuo ^a  

^a CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

Four point bending; Mechanical stress; MOSFETs

Indexed keywords

DIRECT MEASUREMENT; FINITE ELEMENT ANALYSIS; FOUR POINT BENDING; FOUR-POINT; MECHANICAL STRESS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; PIEZORESISTANCE COEFFICIENTS; RESISTANCE CHANGE; STRAIN GAUGE; WHEATSTONE;

BRIDGE CIRCUITS; FIELD EFFECT TRANSISTORS; FINITE ELEMENT METHOD; INSTRUMENTS; MOSFET DEVICES; SILICON WAFERS; STRAIN GAGES;

STRESS MEASUREMENT;

EID: 79953778405     PISSN: 02632241     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.measurement.2011.02.019     Document Type: Article

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