Giant piezoresistance measured in n-type nanothick si layer that has interface with SiO2

IEEE Electron Device Letters

Volumn 32, Issue 3, 2011, Pages 411-413

  Yang, Yongliang ^a   Li, Xinxin ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Interface effect; piezoresistance; quantum effect; silicon

Indexed keywords

BULK SILICON; ELECTRON CONCENTRATION; INTERFACE EFFECT; MOBILITY CHANGES; N TYPE SILICON; ORDER OF MAGNITUDE; PIEZO-RESISTIVE; PIEZORESISTANCE; PIEZORESISTIVE COEFFICIENTS; QUALITATIVE MODELING; QUANTUM CONFINEMENT EFFECTS; QUANTUM EFFECT; QUANTUM EFFECTS; SI LAYER; SILICON RESISTORS; TRAPPING EFFECTS;

QUANTUM ELECTRONICS; RESISTORS; SILICON COMPOUNDS;

SILICON OXIDES;

EID: 79951942414     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2098388     Document Type: Article

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