SCOPUS 정보 검색 플랫폼

Vacuum

Volumn 85, Issue 2, 2010, Pages 184-186

Tungsten-doped ZnO transparent conducting films deposited by direct current magnetron sputtering

(5) Zhang, Huafu a Liu, Hanfa a Lei, Chengxin a Yuan, Changkun a Zhou, Aiping a

a SHANDONG UNIVERSITY OF TECHNOLOGY (China)

Author keywords

Magnetron sputtering; Semiconductors; Thin films; Tungsten doped ZnO

Indexed keywords

DEPOSITED FILMS; DIRECT CURRENT MAGNETRON SPUTTERING; DOPED ZNO; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL RESISTIVITY; GLASS SUBSTRATES; HEXAGONAL STRUCTURES; HIGH TRANSMITTANCE; LOW TEMPERATURES; POLYCRYSTALLINE; PREFERRED ORIENTATIONS; SEMICONDUCTORS; TRANSPARENT CONDUCTING FILMS; TRANSPARENT THIN FILM; VISIBLE RANGE; ZNO;

CARRIER CONCENTRATION; CONDUCTIVE FILMS; ELECTRIC CONDUCTIVITY; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; SUBSTRATES; THIN FILMS; TUNGSTEN; VAPOR DEPOSITION; ZINC OXIDE;

FILM THICKNESS;

EID: 77956611094 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/j.vacuum.2010.05.010 Document Type: Article

Times cited : (29)

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