Metal-semiconductor transition in Nb-doped ZnO thin films prepared by pulsed laser deposition

Thin Solid Films

Volumn 518, Issue 18, 2010, Pages 5288-5291

  Shao, Jingzhen ^a   Dong, Weiwei ^a,b   Li, Da ^a   Tao, Ruhua ^a,b   Deng, Zanhong ^a,b   Wang, Tao ^a   Meng, Gang ^a   Zhou, Shu ^a   Fang, Xiaodong ^a,b  

^a ANHUI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^b INSTITUTE OF PLASMA PHYSICS   (China)

Author keywords

Metal semiconductor transition; Nb doped zinc oxide; Photoelectric properties; Pulsed laser deposition; Transparent conducting oxides

Indexed keywords

METAL-SEMICONDUCTOR TRANSITIONS; NB-DOPED ZINC OXIDE; PHOTOELECTRIC PROPERTIES; PULSED LASER; TRANSPARENT CONDUCTING OXIDE;

CONDUCTIVE FILMS; DEPOSITION; METALLIC FILMS; METALS; OPTICAL PROPERTIES; PHOTOELECTRICITY; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTING FILMS; SEMICONDUCTOR LASERS; ZINC; ZINC OXIDE;

NIOBIUM OXIDE;

EID: 77955658058     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.04.068     Document Type: Article

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