An analytical model of an OCVD-Based measurement technique of the local carrier lifetime

IEEE Transactions on Electron Devices

Volumn 54, Issue 11, 2007, Pages 2998-3006

  Bellone, Salvatore ^a   Licciardo, Gian Domenico ^a   Guerriero, Gabriel ^b   Rubino, Alfredo ^a  

^a UNIVERSITY OF SALERNO   (Italy)

^b UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

Carrier recombination lifetime; Lifetime profile; Measurement technique; Modeling; Negative resistance; Open circuit voltage decay (OCVD)

Indexed keywords

CARRIER LIFETIME; EPILAYERS; MATHEMATICAL MODELS; NEGATIVE RESISTANCE;

LIFETIME PROFILE; OPEN-CIRCUIT VOLTAGE DECAY;

OPEN CIRCUIT VOLTAGE;

EID: 36248941262     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.907162     Document Type: Article

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