Experimental measurements of majority and minority carrier lifetime profile in SI epilayers by the use of an improved OCVD method

IEEE Electron Device Letters

Volumn 26, Issue 7, 2005, Pages 501-503

  Bellone, Salvatore ^a   Licciardo, Gian Domenico ^a   Daliento, Santolo ^b   Mele, Luigi ^b  

^a UNIVERSITY OF SALERNO   (Italy)

^b UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

Diode; Lifetime; Open circuit voltage decay (OCVD); Profile; Recombination

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DIODES;

BIPOLAR TEST STRUCTURE; MAJORITY CARRIER LIFETIME PROFILE; MINORITY CARRIER LIFETIME PROFILE; OPEN CIRCUIT VOLTAGE DECAY (OCVD); SILICON EPILAYERS;

SEMICONDUCTING SILICON;

EID: 22944478015     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.851137     Document Type: Article

References (7)

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