Extremely high peak current densities of over 1 × 106 A/cm2 in InP-based InGaAs/AlAs Resonant tunneling diodes grown by metal-organic vapor-phase epitaxy

Japanese Journal of Applied Physics

Volumn 49, Issue 5 PART 1, 2010, Pages 0512011-0512016

  Sugiyama, Hiroki ^a   Yokoyama, Haruki ^a   Teranishi, Atsushi ^b   Suzuki, Safumi ^b   Asada, Masahiro ^b  

^a NTT CORPORATION   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER THICKNESS; DOPING CONCENTRATION; DOUBLE BARRIERS; EXPONENTIAL DEPENDENCE; HETERO-INTERFACES; HIGH QUALITY; HIGH-PEAK CURRENTS; HIGH-TEMPERATURE GROWTH; INP; IV CHARACTERISTICS; METAL-ORGANIC; METALORGANIC VAPOR PHASE EPITAXY; PEAK TO VALLEY CURRENT RATIO; ROOM TEMPERATURE; SI DOPANT; SI-DOPING; SPACER THICKNESS; STRUCTURAL PARAMETER;

CRYSTAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; RESONANT TUNNELING; RESONANT TUNNELING DIODES; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SILICON;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77952727611     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.051201     Document Type: Article

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