TDR measurement method for voltage-dependent capacitance of power devices and components

IEEE Transactions on Power Electronics

Volumn 27, Issue 7, 2012, Pages 3444-3451

  Ariga, Zen Nosuke ^a   Wada, Keiji ^a   Shimizu, Toshihisa ^a  

^a TOKYO METROPOLITAN UNIVERSITY   (Japan)

Author keywords

Circuit parameters; equivalent circuit; time domain reflectometry (TDR); voltage dependent capacitance

Indexed keywords

ANODE CATHODES; CIRCUIT DESIGNS; CIRCUIT PARAMETER; DC BIAS VOLTAGE; EQUIVALENT CIRCUIT MODEL; HIGH-SPEED; MEASUREMENT METHODS; MEASURING CIRCUIT; MOSFETS; NOISE ANALYSIS; PARASITIC PARAMETER; PASSIVE COMPONENTS; POWER DEVICES; POWER ELECTRONICS CIRCUITS; REVERSE BIAS; SIC DIODES; TIME DOMAIN REFLECTOMETRY;

CAPACITANCE; CERAMIC CAPACITORS; ELECTRIC EQUIPMENT; ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK PARAMETERS; EQUIVALENT CIRCUITS; INTEGRATED CIRCUIT MANUFACTURE; MOSFET DEVICES; POWER ELECTRONICS; REFLECTION; REFLECTOMETERS; SILICON CARBIDE;

TIME DOMAIN ANALYSIS;

EID: 84859770247     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2011.2181956     Document Type: Article

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