An accurate capacitance-voltage measurement method for highly leaky devices - Part I

IEEE Transactions on Electron Devices

Volumn 55, Issue 9, 2008, Pages 2429-2436

  Wang, Y ^a   Cheung, Kin Ping ^b   Choi, R ^c   Lee, B H ^c  

^a RUTGERS UNIVERSITY   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c SEMATECH   (United States)

Author keywords

Capacitance voltage (C V); Leakage; RF capacitor; Time domain; Time domain reflectometry (TDR); Ultra thin oxide

Indexed keywords

CAPACITANCE; GATE DIELECTRICS; GATES (TRANSISTOR); LEAKAGE CURRENTS;

C-V MEASUREMENTS; CAPACITANCE-VOLTAGE (C-V); CAPACITANCE-VOLTAGE MEASUREMENTS; CMOS TECHNOLOGIES; EASE-OF-USE; HIGH-ACCURACY; LEAKAGE; OVERLAP CAPACITANCE; RF CAPACITOR; SERIES RESISTANCE; TIME DOMAIN; TIME-DOMAIN REFLECTOMETRY (TDR); TIME-DOMAIN-REFLECTOMETRY; ULTRA THIN OXIDE;

METHOD OF MOMENTS;

EID: 50549088703     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.928489     Document Type: Article

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