Physics-based SPICE-model for IGBTs with transparent emitter

IEEE Transactions on Power Electronics

Volumn 24, Issue 12, 2009, Pages 2821-2832

  Cotorogea, Maria ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Insulated gate bipolar transistor (IGBT) model; PSpice; Short circuit; Transient behavior; Transparent emitter

Indexed keywords

CIRCUIT SIMULATORS; DEVICE STRUCTURES; FABRICATION TECHNOLOGIES; FREQUENCY RANGES; HOMOGENEOUS STRUCTURE; IGBT MODELS; PHYSICS-BASED; PHYSICS-BASED MODELS; POWER ELECTRONIC DEVICES; POWER SEMICONDUCTOR DEVICES; SHORT CIRCUIT; SIMULATION PROGRAM WITH INTEGRATED CIRCUIT EMPHASIS; SWITCHING LOSS; TRANSIENT BEHAVIOR; TRANSPARENT EMITTER; TRANSPARENT EMITTERS;

ACTIVE FILTERS; BIPOLAR TRANSISTORS; CIRCUIT SIMULATION; ELECTRON DEVICES; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; WELDS;

SPICE;

EID: 74349129726     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2009.2030328     Document Type: Article

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