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1
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84859717973
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[Online]
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Top 500 Lists Release, 2011 [Online]. Available: http://www.top500. org/lists
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(2011)
Top 500 Lists Release
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2
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33746875623
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3-D silicon integration and silicon packaging technology using silicon through-vias
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Aug.
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J. U. Knickerbocker, C. S. Patel, P. S. Andry, C. K. Tsang, L. P. Buckwalter, E. J. Sprogis, H. Gan, R. R. Horton, R. J. Polastre, S. L.Wright, and J. M. Cotte, "3-D silicon integration and silicon packaging technology using silicon through-vias," IEEE J. Solid-State Circuits, vol. 41, no. 8, pp. 1718-1725, Aug. 2006.
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(2006)
IEEE J. Solid-State Circuits
, vol.41
, Issue.8
, pp. 1718-1725
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Knickerbocker, J.U.1
Patel, C.S.2
Andry, P.S.3
Tsang, C.K.4
Buckwalter, L.P.5
Sprogis, E.J.6
Gan, H.7
Horton, R.R.8
Polastre, R.J.9
Wright, S.10
Cotte, J.M.11
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3
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51349107972
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50 m pitch Pb-free micro-bumps by C4NP technology
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May
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B. Dang, D.-Y. Shih, S. Buchwalter, C. Tsang, C. Patel, J. Knickerbocker, P. Gruber, S. Knickerbocker, J. Garant, K. Semkow, K. Ruhmer, and E. Hughlett, "50 m pitch Pb-free micro-bumps by C4NP technology," in Proc. IEEE Electronic Components and Technology Conf., May 2008, pp. 1505-1510.
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(2008)
Proc. IEEE Electronic Components and Technology Conf.
, pp. 1505-1510
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Dang, B.1
Shih, D.-Y.2
Buchwalter, S.3
Tsang, C.4
Patel, C.5
Knickerbocker, J.6
Gruber, P.7
Knickerbocker, S.8
Garant, J.9
Semkow, K.10
Ruhmer, K.11
Hughlett, E.12
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4
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80052675141
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An 8 10-Gb/s source-synchronous I/O system based on high-density silicon carrier interconnects
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Jun.
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T. O. Dickson, Y. Liu, S. V. Rylov, B.Dang, C.K. Tsang, P. S.Andry, J. F. Bulzacchelli, H. A. Ainspan, X. Gu, L. Turlapati,M. P. Beakes, B. D. Parker, J. U. Knickerbocker, and D. J. Friedman, "An 8 10-Gb/s source-synchronous I/O system based on high-density silicon carrier interconnects," in Symp. VLSI Circuits Dig., Jun. 2011, pp. 80-81.
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(2011)
Symp. VLSI Circuits Dig.
, pp. 80-81
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Dickson, T.O.1
Liu, Y.2
Rylov, S.V.3
Dang, B.4
Tsang, C.K.5
Andry, P.6
Bulzacchelli, J.F.7
Ainspan, H.A.8
Gu, X.9
Turlapatim, P.10
Beakes, L.11
Parker, B.D.12
Knickerbocker, J.U.13
Friedman, D.J.14
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5
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72949097916
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A 10-Gb/s compact low-power serial I/O with DFE-IIR equalization in 65 nm CMOS
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Dec.
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B. Kim, Y. Liu, T. O. Dickson, J. F. Bulzacchelli, and D. J. Friedman, "A 10-Gb/s compact low-power serial I/O with DFE-IIR equalization in 65 nm CMOS," IEEE J. Solid-State Circuits, vol. 44, no. 12, pp. 3526-3538, Dec. 2009.
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(2009)
IEEE J. Solid-State Circuits
, vol.44
, Issue.12
, pp. 3526-3538
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Kim, B.1
Liu, Y.2
Dickson, T.O.3
Bulzacchelli, J.F.4
Friedman, D.J.5
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6
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70349275872
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A78mW11.1 Gb/s 5-tap DFE receiver with digitally calibrated current-integrating summers in 65 nm CMOS
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San Francisco, CA, Feb.
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J. F. Bulzacchelli, T. O. Dickson, Z. T. Deniz, H. A. Ainspan, B. D. Parker, M. P. Beakes, S. V. Rylov, and D. J. Friedman, "A78mW11.1 Gb/s 5-tap DFE receiver with digitally calibrated current-integrating summers in 65 nm CMOS," in IEEE Int. Solid-State Circuits Conf. Dig., San Francisco, CA, Feb. 2009, pp. 368-369.
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(2009)
IEEE Int. Solid-State Circuits Conf. Dig.
, pp. 368-369
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Bulzacchelli, J.F.1
Dickson, T.O.2
Deniz, Z.T.3
Ainspan, H.A.4
Parker, B.D.5
Beakes, M.P.6
Rylov, S.V.7
Friedman, D.J.8
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8
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77957996391
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All-digital CDR for high-density, high-speed I/O
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Jun.
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M. Loh and A. Emami-Neyestanak, "All-digital CDR for high-density, high-speed I/O," in Symp. VLSI Circuits Dig., Jun. 2010, pp. 147-148.
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(2010)
Symp. VLSI Circuits Dig.
, pp. 147-148
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Loh, M.1
Emami-Neyestanak, A.2
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9
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57849158609
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A 14-mW6.25-Gb/s transceiver in 90-nm CMOS
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Dec.
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J. Poulton, R. Palmer, A. M. Fuller, T. Greer, J. Eyles, W. J. Dally, andM. Horowitz, "A 14-mW6.25-Gb/s transceiver in 90-nm CMOS," IEEE J. Solid-State Circuits, vol. 42, no. 12, pp. 2745-2757, Dec. 2007.
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(2007)
IEEE J. Solid-State Circuits
, vol.42
, Issue.12
, pp. 2745-2757
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Poulton, J.1
Palmer, R.2
Fuller, A.M.3
Greer, T.4
Eyles, J.5
Dally, W.J.6
Horowitz, M.7
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10
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63449116856
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A 12-Gb/s, 11-mW half-rate sampled 5-tap decision feedback equalizer with current-integrating summers in 45 nm SOI CMOS technology
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Apr.
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T. O. Dickson, J. F. Bulzacchelli, and D. J. Friedman, "A 12-Gb/s, 11-mW half-rate sampled 5-tap decision feedback equalizer with current-integrating summers in 45 nm SOI CMOS technology," IEEE J. Solid-State Circuits, vol. 44, no. 4, pp. 1298-1305, Apr. 2009.
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(2009)
IEEE J. Solid-State Circuits
, vol.44
, Issue.4
, pp. 1298-1305
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Dickson, T.O.1
Bulzacchelli, J.F.2
Friedman, D.J.3
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11
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78650062073
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A 47 10 Gb/s 1.4 mW/Gb/s parallel interface in 45 nm CMOS
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Dec.
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F. O'Mahony, J. E. Jaussi, J. Kennedy, G. Balamurugan, M. Mansuri, C. Roberts, S. Shekhar, R. Mooney, and B. Casper, "A 47 10 Gb/s 1.4 mW/Gb/s parallel interface in 45 nm CMOS," IEEE J. Solid-State Circuits, vol. 45, no. 12, pp. 2828-2837, Dec. 2010.
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(2010)
IEEE J. Solid-State Circuits
, vol.45
, Issue.12
, pp. 2828-2837
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O'Mahony, F.1
Jaussi, J.E.2
Kennedy, J.3
Balamurugan, G.4
Mansuri, M.5
Roberts, C.6
Shekhar, S.7
Mooney, R.8
Casper, B.9
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12
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84855366976
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High-density silicon carrier transmission line design for chip-to-chip interconnects
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San Jose, CA, Oct.
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X. Gu, L. Turlapati, B. Dang, C. K. Tsang, P. S. Andry, T. O. Dickson, M. P. Beakes, J. U. Knickerbocker, and D. J. Friedman, "High-density silicon carrier transmission line design for chip-to-chip interconnects," in Proc. 20th IEEE Conf. Electrical Performance of Electronic Packaging and Systems, San Jose, CA, Oct. 2011, pp. 37-30.
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(2011)
Proc. 20th IEEE Conf. Electrical Performance of Electronic Packaging and Systems
, pp. 37-30
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Gu, X.1
Turlapati, L.2
Dang, B.3
Tsang, C.K.4
Andry, P.S.5
Dickson, T.O.6
Beakes, M.P.7
Knickerbocker, J.U.8
Friedman, D.J.9
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