SCOPUS 정보 검색 플랫폼

Volumn 100, Issue 12, 2012, Pages

Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

(9) Issaoui, R a Achard, J a Tallaire, A a Silva, F a Gicquel, A a Bisaro, R b Servet, B b Garry, G b Barjon, J c

a CNRS (France)

b THALES RESEARCH AND TECHNOLOGY (France)

c Centre National de la Recherche Scientifique (France)

Author keywords

[No Author keywords available]

Indexed keywords

BORON CONCENTRATIONS; BORON DOPED DIAMOND; BORON-DOPING; CHEMICAL VAPOUR DEPOSITION; ELECTRICAL RESISTIVITY; FOUR-POINT PROBE MEASUREMENTS; HIGH QUALITY; HIGH RESOLUTION X RAY DIFFRACTION; MOSAICITY; POWER ELECTRONIC DEVICES; SECONDARY ION MASS SPECTROSCOPY; STRUCTURAL QUALITIES; X RAY ROCKING CURVE;

CHEMICAL VAPOR DEPOSITION; ELECTRIC POWER SYSTEMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MEASUREMENTS; SECONDARY ION MASS SPECTROMETRY; VAPORS; X RAY DIFFRACTION;

DIAMOND FILMS;

EID: 84859526121 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3697568 Document Type: Article

Times cited : (28)

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