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Volumn 95, Issue 25, 2009, Pages

Enhanced photoluminescence of strained Ge with a δ-doping SiGe layer on silicon and silicon-on-insulator

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BAND TRANSITIONS; EXCITED ELECTRONS; L-VALLEY; RESONANT EFFECT; ROOM TEMPERATURE; SI-BASED; SIGE LAYERS; SILICON ON INSULATOR; SILICON TECHNOLOGIES; SILICON-ON-INSULATOR SUBSTRATES; STRAINED-GE;

EID: 73449105047     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3275863     Document Type: Article
Times cited : (19)

References (18)
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    • DOI 10.1364/OE.15.011272
    • J. F. Liu, X. C. Sun, D. Pan, X. X. Wang, L. C. Kimerling, J. Michel, and T. L. Koch, Opt. Express 1094-4087 15, 11272 (2007). 10.1364/OE.15.011272 (Pubitemid 47360563)
    • (2007) Optics Express , vol.15 , Issue.18 , pp. 11272-11277
    • Liu, J.1    Sun, X.2    Pan, D.3    Wang, X.4    Kimerling, L.C.5    Koch, T.L.6    Michel, J.7
  • 12
    • 42249088262 scopus 로고    scopus 로고
    • 0022-0248. 10.1016/j.jcrysgro.2008.01.016
    • Z. Zhou, C. Li, H. Lai, S. Chen, and J. Yu, J. Cryst. Growth 0022-0248 310, 2508 (2008). 10.1016/j.jcrysgro.2008.01.016
    • (2008) J. Cryst. Growth , vol.310 , pp. 2508
    • Zhou, Z.1    Li, C.2    Lai, H.3    Chen, S.4    Yu, J.5
  • 13
    • 42649097591 scopus 로고    scopus 로고
    • 0163-1829. 10.1103/PhysRevB.77.155323
    • D. J. Paul, Phys. Rev. B 0163-1829 77, 155323 (2008). 10.1103/PhysRevB.77.155323
    • (2008) Phys. Rev. B , vol.77 , pp. 155323
    • Paul, D.J.1
  • 16
    • 84984095399 scopus 로고
    • 0031-8957. 10.1002/pssb.19650110126
    • S. M. Ryvkin, Phys. Status Solidi 0031-8957 11, 285 (1965). 10.1002/pssb.19650110126
    • (1965) Phys. Status Solidi , vol.11 , pp. 285
    • Ryvkin, S.M.1
  • 18
    • 33744648436 scopus 로고
    • 10.1103/PhysRev.98.1866
    • J. R. Haynes, Phys. Rev. 98, 1866 (1955). 10.1103/PhysRev.98.1866
    • (1955) Phys. Rev. , vol.98 , pp. 1866
    • Haynes, J.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.