Impact of discrete-charge-induced variability on scaled MOS devices

IEICE Transactions on Electronics

Volumn E95-C, Issue 4, 2012, Pages 414-420

  Takeuchi, Kiyoshi ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Random dopant fluctuation; Random telegraph noise; Reliability; Variability

Indexed keywords

FINFET; RELIABILITY; SURFACE STATES; TELEGRAPH; THRESHOLD VOLTAGE;

DEVICE CHARACTERISTICS; RANDOM DOPANT FLUCTUATION; RANDOM TELEGRAPH NOISE; RESIDUAL CHARGE; TIME DEPENDENT BEHAVIOR; ULTRA-THIN-BODY; VARIABILITY; VARIATION-AWARE DESIGN;

MOS DEVICES;

EID: 84859389791     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1587/transele.E95.C.414     Document Type: Article

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